操作流程

1. 确认实验室的气体检测装置为绿灯，确认设备loadlock中有硅片，确认电脑System界面中\(\triangleleft \triangleright\)为绿三角（真空度正常），确认分子泵的速度温度指示为绿色
2. 如果没有登录，输入user - s102user登录
3. 检查上一个用户的使用记录，查看相应的表，空runChamber Clean或者Chamber Clean Two Steps
4. 空run本次ICP要使用的程序diamond etch-1五分钟
5. loadlock中点击stop停止真空泵抽气，点击vent对loadlock放气至大气压，大约至\(8\times 10^{-2}\)时可以开仓放样品
6. 在recipe中选择Load-Run-diamond etch-1，检查相应的参数设置，设置运行时间为30s
7. 运行程序，待程序结束
8. 在System界面中点击stop，点击vent，取出样品，放回硅片，点击pump抽真空
9. 设置Process > Chamber > Chiller control > temperature至20，点击start，两秒钟之后点击stop，观察温度正在下降，即可离开

Recipe

Remove \(Ga^+\) after FIB/ Get a Distinct Surface

• Oxygen 7, Argon 8, RF 120W, ICP 1000W
• Check DC bias 243
• Time: 30s
• About 70nm removed

Etch Several Microns

Preclean (without sample)

• 30min, \(O_2\) 50sccm, \(SF_6\) 10sccm, RF 120W, ICP 1500W

program: Chamber Clean

Prepare (without sample)

1. Purge: 10mTorr, 30s, Ar60sccm
2. Stablize: 10mTorr, 1min, O45sccm
3. Standard O2: 20mTorr, 5min, O2 45sccm, RF 30W, ICP 800W
4. Pump 30s
5. Cond: 8mTorr, 8min, Ar 25sccm, Cl2 40sccm, RF 200W, ICP 320W, DC bias <700V
6. Purge: 10mTorr, 30s, Ar 90 sccm

program: preclean-zu

Ar/Cl Etching:

1. Purge: 10mTorr, 1min, Ar 50sccm
2. Stablize: 8mTorr, 1min, Ar 25sccm, Cl2 40sccm
3. Ar/Cl etch: 8mTorr, 30min, Ar 25sccm, Cl2 40sccm, RF 200W, ICP 320W
4. Purge: 10mTorr, 30s, Ar 90sccm
5. pump: 20min
6. repeat 12 times

program: Ar/Cl etch long time

Etching rate: 2um/30min

Etching depth: 14um