Procedure

1. Test for the NV density of the new sample
2. Piranha clean to remove oil
3. ICP 30s to get a distinct surface peak (scanz) (program: diamond etch-1, \(O_2\) 7/\(Ar\) 8, 120W/1000W)
4. Evaporate Al 20nm
5. Marker imprinting by FIB chipname and markers(fixed with Ag colloid, 110 °C bake 30min) (no 3-acid clean and ICP, markers will become difficult to distinguish after this operations)
6. Clean and remove Al (see Clean after FIB)
7. NV location (see NV location program)
8. Piranha clean
9. Evaporate Al 20nm
10. SIL calculation and fabrication by FIB (fixed with Ag colloid, 110 °C bake 30min) (see FIB-SIL)
11. Clean and remove Al (see Clean after FIB)
12. Three-acid Clean to remove carbon
13. ICP etch 70nm(20s) to remove Ga+(Run the program for 30s) (program: diamond etch-1, \(O_2\) 7/\(Ar\) 8, 120W/1000W)
14. Test for the efficiency
15. Piranha clean
16. PMMA Spin-coating and baking (A4, 3 layers, 6000rpm, 90s, 180°C baking for 5min, 5min and 10min respectively)
17. Evaporate Al 20nm
18. EBL, developing Lithography (developing: remove Al (using S1805 developer), DI water, N2, MIBK:IPA=1:3(PMMA developer) 1min, IPA 1min, N2)
19. Plasma clean (program: PMMA clean 6min)
20. Evaporate Ti60nm+Cr60nm+Au60nm
21. Lift off
22. ALD Anti-reflecting coating
23. Fixed with cryogenic colloid, wire bonding